MTM7N50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTM7N50

N-Channel Power MOSFETs, 8A, 450 V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

MTM7N50

Power Field Effect Transistor

MTTM7N50

N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ●VGSRatedat±20V ●SiliconGateforFastSwitchingSpe

PSM7N50CT

7.6A500VSingleN?륝hannelPowerMOSFET

SiHFIB7N50A

UninterruptiblePowerSupply

SIHFIB7N50A

iscN-ChannelMOSFETTransistor

SIHFIB7N50L

PowerMOSFET

FEATURES •SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveReqirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-fr