IXTM5N100

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrentID=5A@TC=25℃ •DrainSourceVoltage-:VDSS=1000V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=2.4Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariations

IXTM5N100

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXTM5N100A

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXTM5N100A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrentID=5A@TC=25℃ •DrainSourceVoltage-:VDSS=1000V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=2Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsf

MTH5N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

OM5N100NK

POWERMOSFETSINATO-3PACKAGE

OM5N100SA

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

VCT5N100

CeramicTrimmerCapacitors5mm