Standard 14 Dip/4 Package

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MMD

Silicon NPN RF Power Transistor 40W @ 175MHz

Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.

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NTE

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 3 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling

文件：40.93 Kbytes 页数：2 Pages

PANJIT

強茂

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 3 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling

文件：40.27 Kbytes 页数：2 Pages

PANJIT

強茂