MTE53N50E中文资料摩托罗拉数据手册PDF规格书

ISOTOP TMOS E-FET Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• 2500 V RMS Isolated Isotop Package

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• Very Low Internal Parasitic Inductance

• IDSS and VDS(on) Specified at Elevated Temperature

• U. L. Recognized, File #E69369