TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

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Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

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ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling

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VBSEMI

微碧半导体

POWER MOSFET 9 AMPS, 100 VOLTS

文件：113.31 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

POWER MOSFET 9 AMPS, 100 VOLTS

文件：113.31 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

POWER MOSFET 9 AMPS, 100 VOLTS

文件：113.31 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

POWER MOSFET 9 AMPS, 100 VOLTS

文件：113.31 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

POWER MOSFET 9 AMPS, 100 VOLTS

ONSEMI

安森美半导体

TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

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