isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：345.8 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：359.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

文件：165.53 Kbytes 页数：5 Pages

Fairchild

仙童半导体

N-Channel Power Mosfets

文件：154.1 Kbytes 页数：5 Pages

ARTSCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.8 Kbytes 页数：2 Pages

ISC

无锡固电