MTD3055V数据手册恩XP中文资料规格书

描述 Description

N–Channel Enhancement–Mode Silicon GateTMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHMTMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs,TMOSV is designed to withstand high energy in the avalancheand commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridgecircuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
• Surface Mount Package Available in 16 mm 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number