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MTB50P03HDL中文资料TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS数据手册恩XP规格书
MTB50P03HDL规格书详情
描述 Description
HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount
P-channel Enhancement-Mode Silicon GateThe D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on)capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSSand VDS(on)Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
技术参数
- 型号：
MTB50P03HDL
- 功能描述：
MOSFET 30V 50A Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ON/安森美 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ON/安森美 |
24+ |
SOT263 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
ON |
24+ |
TO-263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
ON |
23+ |
TO-263 |
6893 |
询价 | |||
ON |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
TO-251 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
ON |
25+23+ |
TO263 |
72084 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 |
