MTB29N15E中文资料摩托罗拉数据手册PDF规格书
MTB29N15E规格书详情
TMOS E-FET™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号：
MTB29N15E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
785 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
onsemi(安森美) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ON/安森美 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ON |
NEW |
TO-263 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
MOTOROLA |
22+ |
TO-263 |
3000 |
原装正品,支持实单 |
询价 | ||
ON |
23+ |
TO252 |
15 |
正规渠道,只有原装! |
询价 | ||
MOTOROLA |
24+ |
35200 |
一级代理/放心采购 |
询价 | |||
ON |
TO263 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ON |
23+ |
TO263 |
5000 |
原装正品,假一罚十 |
询价 | ||
ON/安森美 |
23+ |
TO263 |
15011 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
