TMOS POWER FET 20 AMPERES 200 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high

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Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

N?묬hannel Power MOSFET

文件：252.78 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件：252.78 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N-Channel 200 V (D-S) MOSFET

文件：1.00848 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

TMOS POWER FET 20 AMPERES 200 VOLTS

恩XP

N−Channel Power MOSFET

ONSEMI

安森美半导体