isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

High Energy Power FET

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ONSEMI

安森美半导体

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文件：273.15 Kbytes 页数：10 Pages

Motorola

摩托罗拉

丝印：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET

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VBSEMI

微碧半导体

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恩XP

High Energy Power FET

ONSEMI

安森美半导体