FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR

文件：854.58 Kbytes 页数：13 Pages

Motorola

摩托罗拉

Fully Isolated TMOS E-FET / Power Rifld Effect Transistor

恩XP

恩智浦

TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E

文件：266.59 Kbytes 页数：10 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：346.55 Kbytes 页数：2 Pages

ISC

无锡固电

Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times Specif

文件：175.09 Kbytes 页数：5 Pages

Motorola

摩托罗拉