NDP610BE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

NDP610BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NT610

Wallmount

NTE610

VoltageVariableCapacitanceDiode(TuningDiode)

Description: ThesediodesaredesignedforhighvolumerequirementsofFMRadioandTVtuningandAFC,generalfrequencycontrolandtuningapplications;providingsolid–statereliabilityinreplacementofmechanicaltuningmethods. Features: HighQwithGuaranteedMinimumValues Con

OMS610

OpticalmultiswitchOMS6/10

Briefdescription Theopticalmultiswitchisadevicewithintegrated opticalreceiverandmultiswitchinonecommon housing.TheOMS6/10opticalmultiswitchsystem canbeusedforreceptionofnotonlysatelliteand terrestrialTVsignalsviaitssinglemodeSC/APC opticalinput,butGigabi

OMT610BN

PanelMountingType

OMT610SN

PanelMountingType

OPB610

SlottedOpticalSwitch

Description: TheOPB610andOPB620slottedopticalswitchesconsistofaninfraredemiƫngdiodeandanNPNsiliconphototransistorwithanenhancedlowcurrentroll-offtoimprovecontrastratioandimmunitytobackgroundirradiance. TheOPB611,OPB621slottedopticalswitchconsistsofaninfra

OX610

EurocaseOCXO,Sinewave,HCMOS,36.1x27.2x16.0mm

P610ARM-B

Generalpurpose32-bitmicroprocessor