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MT5C2568

32K x 8 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

文件:149.27 Kbytes 页数:16 Pages

AUSTIN

MT5C2568

All inputs and outputs are TTL compatible

文件:217.48 Kbytes 页数:17 Pages

MICROSS

MT5C2568

Low power standby

文件:217.48 Kbytes 页数:17 Pages

MICROSS

MT5C2568C-20/883C

32K x 8 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

文件:149.27 Kbytes 页数:16 Pages

AUSTIN

MT5C2568C-20SLASH883C

32K x 8 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

文件:149.27 Kbytes 页数:16 Pages

AUSTIN

MT5C2568C-25/883C

32K x 8 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

文件:149.27 Kbytes 页数:16 Pages

AUSTIN

MT5C2568C-25SLASH883C

32K x 8 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

文件:149.27 Kbytes 页数:16 Pages

AUSTIN

MT5C2568C-35/883C

32K x 8 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

文件:149.27 Kbytes 页数:16 Pages

AUSTIN

MT5C2568C-35SLASH883C

32K x 8 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

文件:149.27 Kbytes 页数:16 Pages

AUSTIN

MT5C2568C-45/883C

32K x 8 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

文件:149.27 Kbytes 页数:16 Pages

AUSTIN

详细参数

  • 型号:

    MT5C2568

  • 制造商:

    Micron Technology Inc

  • 功能描述:

    Static RAM, 32Kx8, 28 Pin, Plastic, DIP

  • 制造商:

    MT

  • 制造商:

    MTI

供应商型号品牌批号封装库存备注价格
23+
DIP
3880
正品原装货价格低
询价
ISSI
25+
DIP
49
全新原装正品支持含税
询价
M
24+
DIP--28P
13
询价
MCT
24+/25+
8
原装正品现货库存价优
询价
24+
SOJ
5000
只做原装公司现货
询价
MIT
91
SOJ
2
原装现货海量库存欢迎咨询
询价
25+
SOJ28
3629
原装优势!房间现货!欢迎来电!
询价
MICRON
4
全新原装 货期两周
询价
ASI
23+
CDIP
8560
受权代理!全新原装现货特价热卖!
询价
SUNDRY
25+23+
原厂原包
22981
绝对原装正品现货,全新深圳原装进口现货
询价
更多MT5C2568供应商 更新时间2025-12-11 10:31:00