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MT5C2561

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

MT5C2561

256K x 1 SRAM SRAM MEMORY ARRAY

Austin Semiconductor

MT5C2561C-35L/883C

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

MT5C2561C-35L/IT

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

MT5C2561C-35L/XT

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

MT5C2561C-35LSLASH883C

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

MT5C2561C-35LSLASHIT

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

MT5C2561C-35LSLASHXT

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

MT5C2561C-45L/883C

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

MT5C2561C-45L/IT

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

文件:122 Kbytes 页数:11 Pages

AUSTIN

供应商型号品牌批号封装库存备注价格
MOT
24+
DIP
17500
原装现货 自家库存 欢迎来电
询价
MCT
24+/25+
42
原装正品现货库存价优
询价
24+
LCC
200
进口原装正品优势供应
询价
ASI
2021+
60000
原装现货,欢迎询价
询价
MT
89
7
公司优势库存 热卖中!!
询价
ASI
23+
CDIP
14969
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ASI
22+
AUCDIP
12245
现货,原厂原装假一罚十!
询价
AMI
9423
CDIP24
31
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MT
23+
CLCC28
12800
公司只有原装 欢迎来电咨询。
询价
ASI
QQ咨询
CDIP
826
全新原装 研究所指定供货商
询价
更多MT5C2561供应商 更新时间2025-10-9 17:17:00