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型号	下载订购	功能描述	制造商上传企业	LOGO
MT5C1008C-45	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-45/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-45L	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-45L/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-45LSLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-45SLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN

详细参数

型号：
MT5C1008C-45
制造商：
AUSTIN
制造商全称：
Austin Semiconductor
功能描述：
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市羿芯诚电子有限公司	MT5C1008C-45		20+	DIP陶瓷	2860	原厂原装正品价格优惠公司现货欢迎查询	询价
深圳市一线半导体有限公司	MT5C1008C-45		24+	DIP	10		询价
深圳市美思瑞电子科技有限公司	MT5C1008C-45/883C	ASI	22+	cdip	12245	现货,原厂原装假一罚十!	询价
深圳市安富世纪电子有限公司	MT5C1008C-45/883C	ASI	23+	cdip	112	全新原装正品现货,支持订货	询价
深圳市昊创电子有限公司	MT5C1008C-55	MICROSS	15+	32DIP.400	50	受控型号优势订货-军工器件供应商	询价
深圳市赛特兴科技有限公司	MT5C1008C-55	ASI	QQ咨询	CDIP	133	全新原装研究所指定供货商	询价
深圳市创新迹电子有限公司	MT5C1008C-55	ASI	22+	CDIP	20000	公司只做原装品质保障	询价
深圳市达恩科技有限公司	MT5C1008CE-30/883	ASI	24+	NA	300	进口原装正品优势供应	询价
深圳市毅创弘电子科技有限公司	MT5C1008CE-30/883	ASI	24+	NA	66800	原厂授权一级代理,专注汽车、医疗、工业、新能源！	询价
深圳市威尔健半导体有限公司	MT5C1008CE-30/883	ASI	23+	NA	50000	全新原装正品现货,支持订货	询价

更多MT5C1008C-45供应商更新时间2026-1-31 10:18:00

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