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MT5C1008C-25

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008C-25/883C

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008C-25L

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008C-25L/883C

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008C-25LSLASH883C

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008C-25SLASH883C

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

详细参数

  • 型号:

    MT5C1008C-25

  • 制造商:

    AUSTIN

  • 制造商全称:

    Austin Semiconductor

  • 功能描述:

    128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

供应商型号品牌批号封装库存备注价格
ASI
23+
DIP40
8560
受权代理!全新原装现货特价热卖!
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15+
32DIP.400
50
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24+
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66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
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2021+
60000
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ASI
2023+
5850
进口原装现货
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ASI
QQ咨询
CDIP
93
全新原装 研究所指定供货商
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ASI
23+
CDIP
30
全新原装正品现货,支持订货
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24+
100
本站现库存
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ASI
18+
CDIP
85600
保证进口原装可开17%增值税发票
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ASI
三年内
1983
只做原装正品
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更多MT5C1008C-25供应商 更新时间2025-10-6 8:04:00