首页 >MT5C1008C-25>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MT5C1008C-25 | 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN Austin Semiconductor | AUSTIN | |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN Austin Semiconductor | AUSTIN | ||
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN Austin Semiconductor | AUSTIN | ||
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN Austin Semiconductor | AUSTIN | ||
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN Austin Semiconductor | AUSTIN | ||
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio | AUSTIN Austin Semiconductor | AUSTIN |
详细参数
- 型号：
MT5C1008C-25
- 制造商：
AUSTIN
- 制造商全称：
Austin Semiconductor
- 功能描述：
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ASI |
23+ |
DIP40 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
MICROSS |
15+ |
32DIP.400 |
50 |
受控型号优势订货-军工器件供应商 |
询价 | ||
ASI |
24+ |
CDIP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
ASI |
2021+ |
60000 |
原装现货，欢迎询价 |
询价 | |||
ASI |
2023+ |
5850 |
进口原装现货 |
询价 | |||
ASI |
QQ咨询 |
CDIP |
93 |
全新原装 研究所指定供货商 |
询价 | ||
ASI |
23+ |
CDIP |
30 |
全新原装正品现货,支持订货 |
询价 | ||
24+ |
100 |
本站现库存 |
询价 | ||||
ASI |
18+ |
CDIP |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
ASI |
三年内 |
1983 |
只做原装正品 |
询价 |
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