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型号	下载订购	功能描述	制造商上传企业	LOGO
MT5C1008C-20	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-20/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-20L	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-20L/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-20LSLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-20SLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio 文件：187.15 Kbytes 页数：17 Pages	AUSTIN	AUSTIN
MT5C1008C-20/883C	文件：300 bytes Page：1 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS	ASI Semiconductor	ASI Semiconductor
MT5C1008C-20L/883C	文件：300 bytes Page：1 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS	ASI Semiconductor	ASI Semiconductor

详细参数

型号：
MT5C1008C-20
制造商：
AUSTIN
制造商全称：
Austin Semiconductor
功能描述：
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创弘电子科技有限公司	MT5C1008C-20	ASI	24+	CDIP	1500	AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航	询价
深圳诚思涵科技有限公司	MT5C1008C-20	ASI	18+	CDIP32	85600	保证进口原装可开17%增值税发票	询价
深圳市达恩科技有限公司	MT5C1008C-20	ASI	24+	CDIP	300	进口原装正品优势供应	询价
深圳市昊创电子有限公司	MT5C1008C-20	MICROSS	15+	32DIP.400	50	受控型号优势订货-军工器件供应商	询价
深圳市美思瑞电子科技有限公司	MT5C1008C-20	ASI	22+	AUCDIP	12245	现货,原厂原装假一罚十!	询价
深圳市毅创腾电子科技有限公司	MT5C1008C-20/883C	ASI	23+	CDIP	3200	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
深圳市华斯顿科技有限公司	MT5C1008C-20/883C(5962-8959838	Micross/ASI	25+23+	BGA	19520	绝对原装正品全新进口深圳现货	询价
深圳市纳立科技有限公司	MT5C1008C-20/883C	ASI	三年内		1983	只做原装正品	询价
深圳市拓亿芯电子有限公司	MT5C1008C-20/883C	MICROSS	23+	DIP	30000	代理全新原装现货,价格优势	询价
艾睿（深圳）半导体有限公司	MT5C1008C-20/883C=5962-8959838	MICROSS	2447	20	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多MT5C1008C-20供应商更新时间2025-10-13 8:16:00

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