MT58L512Y36D中文资料镁光数据手册PDF规格书

GENERAL DESCRIPTION

The Micron®SyncBurst™SRAM family employs high speed, low-power CMOS designs that are fabricated using an advanced CMOS process.

Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK).

FEATURES

• Fast clock and OE# access times

• Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD)

• Separate +3.3V or 2.5V isolated output buffer supply (VDDQ)

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL WRITE

• Three chip enables for simple depth expansion and address pipelining

• Clock-controlled and registered addresses, data I/Os and control signals

• Internally self-timed WRITE cycle

• Burst control (interleaved or linear burst)

• Automatic power-down

• 100-pin TQFP package

• 165-pin FBGA package

• Low capacitive bus loading

• x18, x32, and x36 versions available