8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM

GENERAL DESCRIPTION\nThe Micron® Zero Bus Turnaround™ (ZBT®) SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process.\nMicron’s 8Mb ZBT SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counte • High frequency and 100 percent bus utilization\n• Fast cycle times: 6ns, 7.5ns and 10ns\n• Single +3.3V ±5% power supply (VDD)\n• Separate +3.3V or +2.5V isolated output buffer supply (VDDQ)\n• Advanced control logic for minimum control signal interface\n• Individual BYTE WRITE controls may be;

Micron

美光

8Mb ZBT SRAM

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Micron

美光

8Mb ZBT® SRAM

GENERAL DESCRIPTION\nThe Micron® Zero Bus Turnaround™ (ZBT®) SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process.\nMicron’s 8Mb ZBT SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counte • High frequency and 100 percent bus utilization\n• Fast cycle times: 6ns, 7.5ns and 10ns\n• Single +3.3V ±5% power supply (VDD)\n• Separate +3.3V or +2.5V isolated output buffer supply (VDDQ)\n• Advanced control logic for minimum control signal interface\n• Individual BYTE WRITE controls may be;

Micron

美光

美芯晟
QFN32

美芯晟

上传：深圳市勤思达科技有限公司

MAXIC/美芯晟
WLCSP

MAXIC/美芯晟

上传：深圳市兴联达电子有限公司(原兴达电子)