MT4LC4M16N3TG-5资料datasheet下载市场行情-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
MT4LC4M16N3TG-5	文件：474.53 Kbytes Page：24 Pages	DRAM GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 文件：474.53 Kbytes 页数：24 Pages	Micron 美光	Micron
MT4LC4M16N3TG-5	文件：413.1 Kbytes Page：24 Pages	DRAM 文件：413.1 Kbytes 页数：24 Pages	Micron 美光	Micron
MT4LC4M16N3TG-5	文件：300 bytes Page：1 Pages	DRAM	Micron 美光	Micron
MT4LC4M16N3TG-5S	文件：474.53 Kbytes Page：24 Pages	DRAM GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 文件：474.53 Kbytes 页数：24 Pages	Micron 美光	Micron
MT4LC4M16N3TG-5S	文件：413.1 Kbytes Page：24 Pages	DRAM 文件：413.1 Kbytes 页数：24 Pages	Micron 美光	Micron

更多MT4LC4M16N3TG-5供应商更新时间2025-11-20 11:10:00