4 MEG x 4 EDO DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the col

文件：291.14 Kbytes 页数：23 Pages

Micron

美光

4 MEG x 4 EDO DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the col

文件：291.14 Kbytes 页数：23 Pages

Micron

美光

4 MEG x 4 EDO DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the col

文件：291.14 Kbytes 页数：23 Pages

Micron

美光

4 MEG x 4 EDO DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the col

文件：291.14 Kbytes 页数：23 Pages

Micron

美光

4 MEG x 4 EDO DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the col

文件：291.14 Kbytes 页数：23 Pages

Micron

美光