DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the colu

文件：360.23 Kbytes 页数：20 Pages

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DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the colu

文件：360.23 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the colu

文件：360.23 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the colu

文件：360.23 Kbytes 页数：20 Pages

Micron

美光

DRAM

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the colu

文件：360.23 Kbytes 页数：20 Pages

Micron

美光