SYNCHRONOUS DRAM

128Mb: x16, x32 MOBILE SDRAM FEATURES • Temperature Compensated Self Refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/prech

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Micron

美光

SYNCHRONOUS DRAM

Micron

美光

SYNCHRONOUS DRAM

128Mb: x16, x32 MOBILE SDRAMFEATURES\n• Temperature Compensated Self Refresh (TCSR)\n• Fully synchronous; all signals registered on positive\n   edge of system clock\n• Internal pipelined operation; column address can be\n   changed every clock cycle\n• Internal banks for hiding row access/precharge • Temperature Compensated Self Refresh (TCSR)\n• Internal pipelined operation; column address can be\n• Internal banks for hiding row access/precharge\n• Auto Precharge, includes CONCURRENT AUTO\n• Self Refresh Mode; standard and low power\n• LVTTL-compatible inputs and outputs\n• Partial Array Self;

Micron

美光

Micron/镁光
VFBGA-54

Micron/镁光

上传：深圳市兴灿科技有限公司

MICRON/美光
TSOP54

MICRON/美光

上传：深圳市澳亿芯电子科技有限公司