SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit

文件：1.48119 Mbytes 页数：51 Pages

Micron

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SYNCHRONOUS DRAM

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit

文件：1.48074 Mbytes 页数：51 Pages

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit

文件：1.48074 Mbytes 页数：51 Pages

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit

文件：1.48119 Mbytes 页数：51 Pages

Micron

美光

SYNCHRONOUS DRAM

Micron

美光

SYNCHRONOUS DRAM

Micron

美光