SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

文件：1.84431 Mbytes 页数：59 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

文件：1.84431 Mbytes 页数：59 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

文件：1.84431 Mbytes 页数：59 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

文件：1.84431 Mbytes 页数：59 Pages

Micron

美光

SYNCHRONOUS DRAM

Micron

美光

Package：54-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 128MBIT PAR 54TSOP II

Micron Technology Inc.

Package：54-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 存储器 描述：IC DRAM 128MBIT PAR 54TSOP II

Micron Technology Inc.

Package：54-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 128MBIT PAR 54TSOP II

Micron Technology Inc.