256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 页数：71 Pages

Micron

美光

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 页数：71 Pages

Micron

美光

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 页数：71 Pages

Micron

美光

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 页数：71 Pages

Micron

美光

Package：90-VFBGA；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 存储器 描述：IC SDRAM 256MB 125MHZ 90-VFBGA

ELPIDA

尔必达

Package：90-VFBGA；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 90VFBGA

ELPIDA

尔必达