首页 >MT48H8M32LFB5-75AT:G>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 镁光美国镁光科技有限公司 | Micron | ||
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 镁光美国镁光科技有限公司 | Micron | ||
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 镁光美国镁光科技有限公司 | Micron | ||
256Mb:16Megx16,8Megx32MobileSDRAM GeneralDescription TheMicron®256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 镁光美国镁光科技有限公司 | Micron |
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