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MT47H64M16HR-3:E TR

包装:托盘 封装/外壳:84-TFBGA 类别:集成电路(IC) 存储器 描述:IC DRAM 1GBIT PARALLEL 84FBGA

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H64M16HR-3AT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H64M16HR-3EAT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H64M16HR-3EIT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H64M16HR-3EL

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H64M16HR-3IT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H64M16HR-3L

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

产品属性

  • 产品编号:

    MT47H64M16HR-3

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    DRAM

  • 技术:

    SDRAM - DDR2

  • 存储容量:

    1Gb(64M x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    15ns

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 85°C(TC)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    84-TFBGA

  • 供应商器件封装:

    84-FBGA(8x12.5)

  • 描述:

    IC DRAM 1GBIT PARALLEL 84FBGA

供应商型号品牌批号封装库存备注价格
MICRON
2017+
FBGA
23589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
MICRON
08+
BGA
21
询价
MICRON
21+
BGA/TSOP
50000
特价来袭!美光一级代理入驻114电子网
询价
MICRON/美光
22+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
Micron
22+
84FBGA (8x12.5)
9000
原厂渠道,现货配单
询价
Micron
23+
84FBGA (8x12.5)
9000
原装正品,支持实单
询价
Micron
21+
84FBGA (8x12.5)
8000
询价
MicronTechnologyInc
2022
ICDDR2SDRAM1GBIT3NS84FBG
5058
原厂原装正品,价格超越代理
询价
MICRON
2008
FBGA84
284
询价
MicronTechnologyInc.
19+
84-FBGA(8x12.5)
26580
存储IC一手货源,极具优势!
询价
更多MT47H64M16HR-3:E供应商 更新时间2024-5-13 11:56:00