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MT47H128M8HQ-3:G TR

包装:管件 封装/外壳:60-FBGA 类别:集成电路(IC) 存储器 描述:IC DRAM 1GBIT PARALLEL 60FBGA

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3AT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3EAT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3EIT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3EL

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3IT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3L

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

产品属性

  • 产品编号:

    MT47H128M8HQ-3

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    易失

  • 存储器格式:

    DRAM

  • 技术:

    SDRAM - DDR2

  • 存储容量:

    1Gb(128M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    15ns

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 85°C(TC)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    60-FBGA

  • 供应商器件封装:

    60-FBGA(8x11.5)

  • 描述:

    IC DRAM 1GBIT PARALLEL 60FBGA

供应商型号品牌批号封装库存备注价格
MTC
23+
NA
126
专做原装正品,假一罚百!
询价
MICRON
09+
BGA
1
询价
MICRON/美光
BGA
13526
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MICRON
23+
BGA
89630
当天发货全新原装现货
询价
Micron
22+
60FBGA (8x11.5)
9000
原厂渠道,现货配单
询价
Micron
23+
60FBGA (8x11.5)
9000
原装正品,支持实单
询价
MicronTechnologyInc
2022
ICDDR2SDRAM1GBIT3NS60FBG
5058
原厂原装正品,价格超越代理
询价
MICROCHIP
22+23+
60-FBGA
18421
绝对原装正品全新进口深圳现货
询价
MicronTechnologyInc.
19+
60-FBGA(8x11.5)
26580
存储IC一手货源,极具优势!
询价
Micron
23+
60-FBGA
65480
询价
更多MT47H128M8HQ-3:G TR供应商 更新时间2024-6-19 17:14:00