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MT47H128M8HQ-37EAT

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

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MT47H128M8HQ-37EIT

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

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MT47H128M8HQ-37EL

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

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MT47H128M8HQ-3AT

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

美光

MT47H128M8HQ-3EAT

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

美光

MT47H128M8HQ-3EIT

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

美光

MT47H128M8HQ-3EL

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

美光

MT47H128M8HQ-3IT

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

美光

MT47H128M8HQ-3L

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

文件:9.27235 Mbytes 页数:131 Pages

Micron

美光

MT47H128M8HQ-3 IT:G TR

IC DRAM 1G PARALLEL 60FBGA

Micron

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详细参数

  • 型号:

    MT47H128M8HQ-3

  • 制造商:

    MICRON

  • 制造商全称:

    Micron Technology

  • 功能描述:

    DDR2 SDRAM

供应商型号品牌批号封装库存备注价格
MICRON
25+
BGA
3600
原厂原装,价格优势
询价
MICRON
2023+
BGA
5800
进口原装,现货热卖
询价
MICRON
23+24
FBGA
3980
主营原装存储,可编程逻辑微处理芯片
询价
MICRON
09+
BGA
62
询价
MICRON
FBGA60
1354
正品原装--自家现货-实单可谈
询价
MICRON
25+
BGA
474
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MICRON
23+
BGA
5000
原装正品,假一罚十
询价
MICRON
23+
BGA
8650
受权代理!全新原装现货特价热卖!
询价
Micron Technology Inc.
21+
165-TBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
BGA
25+
MICRON
30000
代理全新原装现货,价格优势
询价
更多MT47H128M8HQ-3供应商 更新时间2025-11-24 10:10:00