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MT46V32M16TG-75集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
MT46V32M16TG-75 |
参数属性 | MT46V32M16TG-75 封装/外壳为66-TSSOP(szerokość 0,400",10,16mm);包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC DRAM 512MBIT PARALLEL 66TSOP |
功能描述 | DOUBLE DATA RATE DDR SDRAM |
文件大小 |
2.55598 Mbytes |
页面数量 |
68 页 |
生产厂商 | Micron Technology Inc. |
企业简称 |
Micron【镁光】 |
中文名称 | 美国镁光科技有限公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-6-17 22:58:00 |
MT46V32M16TG-75规格书详情
Functional Description
The DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycle data transfer at the internal DRAM core and two corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.
Features
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto refresh
– 64ms, 8192-cycle(Commercial and industrial)
– 16ms, 8192-cycle (Automotive)
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
• tRAS lockout supported (tRAP = tRCD)
MT46V32M16TG-75属于集成电路(IC) > 存储器。美国镁光科技有限公司制造生产的MT46V32M16TG-75存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
MT46V32M16TG-75 IT
- 制造商:
Micron Technology Inc.
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
DRAM
- 技术:
SDRAM - DDR
- 存储容量:
512Mb(32M x 16)
- 存储器接口:
并联
- 写周期时间 - 字,页:
15ns
- 电压 - 供电:
2.3V ~ 2.7V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
66-TSSOP(szerokość 0,400",10,16mm)
- 供应商器件封装:
66-TSOP
- 描述:
IC DRAM 512MBIT PARALLEL 66TSOP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICRON |
2016+ |
TSSOP |
2357 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
MICRON |
2020+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MICRON |
23+ |
TSSOP |
20000 |
原厂原装正品现货 |
询价 | ||
MICRON/美光 |
23+ |
TSOP |
89630 |
当天发货全新原装现货 |
询价 | ||
DLZ |
22+ |
TSOP66 |
354000 |
询价 | |||
MICRON |
21+ |
TSOP |
16500 |
进口原装正品现货 |
询价 | ||
micron(镁光) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
MT |
21+ |
TSOP |
12588 |
原装正品 |
询价 | ||
MICRON |
TSSOP |
2357 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
MicronTechnologyInc |
2022 |
ICDDRSDRAM512MBIT66TSOP |
5058 |
原厂原装正品,价格超越代理 |
询价 |