MT46H8M32LF集成电路（IC）的存储器规格书PDF中文资料

General Description

The 256Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. On the x16 device, each of the 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. On the x32 device, eachof the 67,108,864-bit banks is organized as 4,096 rows by 512 columns by 32 bits.

Features

•VDD/VDDQ = 1.70–1.95V

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center aligned with data for WRITEs

• Four internal banks for concurrent operation

• Data masks (DM) for masking write data—one mask per byte

• Programmable burst lengths: 2, 4, or 8

• Concurrent auto precharge option supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS compatible inputs

• On-chip temperature sensor to control self refresh rate

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Selectable output drive (DS)

• Clock stop capability

• 64ms refresh period