FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 页数：30 Pages

MICRON

美光

Package：44-SOIC（0.496"，12.60mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FLASH 8MBIT PARALLEL 44SOP

Micron Technology Inc.

Package：44-SOIC（0.496"，12.60mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FLASH 8MBIT PARALLEL 44SOP

Micron Technology Inc.

Package：44-SOIC（0.496"，12.60mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FLASH 8MBIT PARALLEL 44SOP

Micron Technology Inc.