FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

文件：428.77 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

Micron

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

文件：428.77 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

文件：428.77 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

文件：428.77 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

文件：428.77 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

文件：428.77 Kbytes 页数：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

文件：428.77 Kbytes 页数：30 Pages

MICRON

美光

Package：40-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT PARALLEL 40TSOP I

Micron Technology Inc.

Package：40-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT PARALLEL 40TSOP I

Micron Technology Inc.