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型号	下载订购	功能描述	制造商上传企业	LOGO
MT28F004B3	文件：428.77 Kbytes Page：30 Pages	FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件：428.77 Kbytes 页数：30 Pages	Micron 美光	Micron
MT28F004B3	文件：300 bytes Page：1 Pages	FLASH MEMORY	Micron 美光	Micron
MT28F004B3SG-8B	文件：428.77 Kbytes Page：30 Pages	FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件：428.77 Kbytes 页数：30 Pages	Micron 美光	Micron
MT28F004B3SG-8T	文件：428.77 Kbytes Page：30 Pages	FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件：428.77 Kbytes 页数：30 Pages	Micron 美光	Micron
MT28F004B3VG-8B	文件：428.77 Kbytes Page：30 Pages	FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件：428.77 Kbytes 页数：30 Pages	Micron 美光	Micron
MT28F004B3VG-8T	文件：428.77 Kbytes Page：30 Pages	FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件：428.77 Kbytes 页数：30 Pages	Micron 美光	Micron
MT28F004B3WG-8B	文件：428.77 Kbytes Page：30 Pages	FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件：428.77 Kbytes 页数：30 Pages	Micron 美光	Micron
MT28F004B3WG-8T	文件：428.77 Kbytes Page：30 Pages	FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件：428.77 Kbytes 页数：30 Pages	Micron 美光	Micron
MT28F004B3VG-8 B TR	文件：100 bytes Page：1 Pages	Package：40-TFSOP（0.724"，18.40mm 宽）；包装：管件类别：集成电路（IC）存储器描述：IC FLASH 4MBIT PARALLEL 40TSOP I	ELPIDA 尔必达	ELPIDA
MT28F004B3VG-8 BET	文件：100 bytes Page：1 Pages	Package：40-TFSOP（0.724"，18.40mm 宽）；包装：管件类别：集成电路（IC）存储器描述：IC FLASH 4MBIT PARALLEL 40TSOP I	ELPIDA 尔必达	ELPIDA

详细参数

型号：
MT28F004B3
制造商：
MICRON
制造商全称：
Micron Technology
功能描述：
FLASH MEMORY

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	MT28F004B3	MT	2021+	TSOP	6800	原厂原装,欢迎咨询	询价
深圳市星佑电子有限公司	MT28F004B3		9914+	TSOP	7	原装	询价
深圳市赛芯源科技有限公司	MT28F004B3	MICRON	19+	TSOP	32000	原装正品,现货特价	询价
深圳市英卓尔科技有限公司	MT28F004B3	MT	20+	TSOP	2960	诚信交易大量库存现货	询价
深圳市美思瑞电子科技有限公司	MT28F004B3	MICRON/美光	22+	TSOP	12245	现货,原厂原装假一罚十!	询价
深圳市晨豪科技有限公司	MT28F004B3	MT	23+	TSOP	89630	当天发货全新原装现货	询价
深圳市柯尔基电子有限公司	MT28F004B3	Lyontek	23+24	BGA	27960	原装现货.优势热卖.终端BOM表可配单	询价
深圳市英科美电子有限公司	MT28F004B3	MT	2223+	TSOP	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市科芯源微电子有限公司	MT28F004B3	MT/兴晶泰	25+	原厂原封可拆样	65248	百分百原装现货实单必成	询价
深圳市佳杰伟业科技有限公司	MT28F004B3	MT	2410+	TSSOP	3266	优势代理渠道原装现货可全系列订货	询价

更多MT28F004B3供应商更新时间2025-10-9 14:00:00

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