MT25QL01GBBB8E12-0AAT集成电路（IC）的存储器规格书PDF中文资料

特性 Features

• Stacked device (two 512Mb die)

• SPI-compatible serial bus interface

• Single and double transfer rate (STR/DTR)

• Clock frequency

– 133 MHz (MAX) for all protocols in STR

– 90 MHz (MAX) for all protocols in DTR

• Dual/quad I/O commands for increased throughput

up to 90 MB/s

• Supported protocols: Extended, Dual and Quad I/O

both STR and DTR

• Execute-in-place (XIP)

• PROGRAM/ERASE SUSPEND operations

• Volatile and nonvolatile configuration settings

• Software reset

• Additional reset pin for selected part numbers

• 3-byte and 4-byte address modes – enable memory

access beyond 128Mb

• Dedicated 64-byte OTP area outside main memory

– Readable and user-lockable

• Erase capability

– Die Erase

– Sector erase 64KB uniform granularity

– Subsector erase 4KB, 32KB granularity

• Erase performance: 400KB/sec (64KB sector)

• Erase performance: 80KB/sec (4KB sub-sector)

• Program performance: 2MB/sec

• Security and write protection

– Volatile and nonvolatile locking and software

write protection for each 64KB sector

– Nonvolatile configuration locking

– Password protection

– Hardware write protection: nonvolatile bits

(BP[3:0] and TB) define protected area size

– Program/erase protection during power-up

– CRC detects accidental changes to raw data

• Electronic signature

– JEDEC-standard 3-byte signature (BA21h)

– Extended device ID: two additional bytes identify

device factory options

• JESD47H-compliant

– Minimum 100,000 ERASE cycles per sector

– Data retention: 20 years (TYP)