MT2004

70V 半桥栅极驱动芯片; • 悬浮绝对电压：70V\n• 电源电压工作范围：10.0-20.0V\n• 兼容3.3/5V输入逻辑\n• 驱动电流：+4.0A/-4.0A(typ.)\n• 死区时间：200ns (typ.)\n• 集成VCC和VBS欠压保护\n• SOP8封装\n\n;

MT2004是一款针对于双NMOS的半桥栅极驱动芯片，专为中压、高速驱动N型功率MOSFET和IGBT设计，可在高达70V电压下工作。\nMT2004内置VCC和VBS欠压 (UVLO)保 护功能，防止功率管在过低的电压下工作，提高效率。\nMT2004输入脚兼容3.3-5.0V输入逻辑，集成防穿通死区时间为200ns，驱动能力为+4.0A/-4.0A。\nMT2004采用SOP8封装。

NCE2004NE

NCEN-ChannelEnhancementModePowerMOSFET

NCE2004NE

DualN-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

NCE2004Y

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE2004Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=20V,ID=4A RDS(ON)

NCS2004

WideSupplyRail-to-RailOutputOperationalAmplifier

NCS2004A

WideSupplyRail-to-RailOutputOperationalAmplifier

NCS2004AMUTAG

WideSupplyRail-to-RailOutputOperationalAmplifier

NCS2004MUTAG

WideSupplyRail-to-RailOutputOperationalAmplifier

NMA-2004

NMA2000NOISESOURCESERIES

NSNJ2004

428MHzLowPowerTransceiver