MSS25-049-C15c中文资料Silicon Schottky P-Type Diodes: Low Barrier数据手册MACOM规格书

描述 Description

MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.

特性 Features

·Superior 1/f noise.
·Passivated with silicon nitride.
·Low barrier height.
·Better temperature stability than zero bias Schottky diode.