SOLID STATE RECORDING LSI(FOR 256K-bit SRAM)

SOLID STATE RECORDING LSI(FOR 256K-bit SRAM)

文件：966.33 Kbytes 页数：24 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

SOLID STATE RECORDING LSI(FOR 256K-bit SRAM)

OKI

冲电线

NATIONAL AEROSPACE STANDARD

文件：1.63529 Mbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

文件：191.98 Kbytes 页数：7 Pages

CEL

1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION

DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. FEATURES • Optical output power Po = 10.0 mW • Low threshold current lth = 10 mA • Differential efficiency ηd = 0.40 W/A • Wide operating temperat

文件：221.68 Kbytes 页数：9 Pages

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