18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM

DESCRIPTION The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology

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QUALCOMM/高通
BGA

QUALCOMM/高通

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QUALCOMM
BGA

QUALCOMM

高通

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QUALCOMM
BGA

QUALCOMM

高通

上传：深圳市勤思达科技有限公司

QUALCOMM
BGA

QUALCOMM

高通

上传：深圳市勤思达科技有限公司