131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM54V32126/8 is a new generation Graphics DRAM organized in a 131,072-word · 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKIs CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES • 131,072-word · 32

文件：303.17 Kbytes 页数：25 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

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131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM54V32126A is a Graphics DRAM organized in a 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126A is OKIs CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES • 131,072-word · 32-bit organization

文件：384.02 Kbytes 页数：26 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM54V32126A is a Graphics DRAM organized in a 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126A is OKIs CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES • 131,072-word · 32-bit organization

文件：384.02 Kbytes 页数：26 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM54V32126A is a Graphics DRAM organized in a 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126A is OKIs CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES • 131,072-word · 32-bit organization

文件：384.02 Kbytes 页数：26 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM54V32126A is a Graphics DRAM organized in a 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126A is OKIs CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES • 131,072-word · 32-bit organization

文件：384.02 Kbytes 页数：26 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM54V32126A is a Graphics DRAM organized in a 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126A is OKIs CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES • 131,072-word · 32-bit organization

文件：384.02 Kbytes 页数：26 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM54V32126A is a Graphics DRAM organized in a 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126A is OKIs CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES • 131,072-word · 32-bit organization

文件：384.02 Kbytes 页数：26 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM54V32126A is a Graphics DRAM organized in a 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126A is OKIs CMOS silicon gate process technology. The device operates with a single 3.3 V power supply. FEATURES • 131,072-word · 32-bit organization

文件：384.02 Kbytes 页数：26 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

OKI

冲电线