1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM51V18165D/DSL is a 1,048,576-word · 16-bit dynamic RAM fabricated in Okis silicon gate CMOS technology. The MSM51V18165D/DSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-la

文件：344.85 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM51V18165F is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer met

文件：191.71 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 16-Bit DYNAMIC RAM :FAST PAGE MODE TYPE WITH EDO

1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

文件：1.0619 Mbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM51V18165B/BSL is a 1,048,576-wordx16-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-laye

文件：105.15 Kbytes 页数：8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM51V18165B/BSL is a 1,048,576-wordx16-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-laye

文件：105.15 Kbytes 页数：8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社