1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116160F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：232.46 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116160F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：232.46 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116160F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：232.46 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116160F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：232.46 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116160F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：232.46 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116160F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：232.46 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116160F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：232.46 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word ×16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION\nThe MSM5116160F is a 1,048,576-word ×16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116160F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device ina quadruple-layer polysilicon/double-layer metal CMO · 1,048,576-word ×16-bit configuration\n· Single 5V power supply, ±10% tolerance\n· Input  : TTL compatible, low input capacitance\n· Output  : TTL compatible, 3-state\n· Refresh : 4096 cycles/64ms\n· Fast page mode, read modify write capability\n· CASbefore RASrefresh, hidden refresh, RAS-only ;

OKI

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