MSM13Q0230中文资料冲电线数据手册PDF规格书

DESCRIPTION

Oki’s 0.3 5 µm ASIC products deliver ultra-high performance and high density at low power dissipation. The MSM13Q0000/14Q0000 series devices (referred to as “MSM13Q/14Q”) are implemented with the industry-standard Cell-Based Array (CBA) architecture in a Sea-of-Gates (SOG) structure. Built in a 0.35 µm drawn CMOS technology (with an L-Effective of 0.27 µm), these SOG devices are available in three layers (MSM13Q) and four layers (MSM14Q) of metal. The semiconductor process is adapted from Oki’s production-proven 64-Mbit DRAM manufacturing process.

FEATURES

• 0.35 µm drawn 3- and 4-layer metal CMOS

• Optimized 3.3-V core

• Optimized 3-V I/O and 3-V I/O that is 5-V tolerant

• CBA SOG architecture

• Over 1.0M raw gates and 352 pads

• User-configurable I/O with VSS, VDD, TTL, 3-state, and 1- to 24-mA options

• Slew-rate-controlled outputs for low-radiated noise

• H-clock tree cells which reduce the maximum skew for clock signals