SiC Schottky Diodes

These dual 1200 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations.  They offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon

Microchip

微芯科技

SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER

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MICROSEMI

美高森美

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

文件：72.25 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

文件：72.25 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a

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ERICSSON

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