SILICON CARBIDE SCHOTTKY POWER RECTIFIER

文件：200.91 Kbytes 页数：5 Pages

Microsemi

美高森美

SiC Schottky Diodes

This 1200 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon rectifiers.

Microchip

微芯科技

SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER

文件：67.88 Kbytes 页数：3 Pages

Microsemi

美高森美

SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER

文件：67.88 Kbytes 页数：3 Pages

Microsemi

美高森美

SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER

文件：67.88 Kbytes 页数：3 Pages

Microsemi

美高森美

SiC Schottky Diodes

These dual 1200 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations.  They offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon

Microchip

微芯科技

SiC Schottky Diodes

These dual 1200 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations.  They offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon

Microchip

微芯科技