MTD20N06V

N?묬hannelDPAK

MTD20N06V

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSV™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50

MTP20N06

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

MTP20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP20N06V

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

MTP20N06V

N?묬hannelPowerMOSFET

NDT20N06

N-ChannelMOSFET

NTD20N06

PowerMOSFET

PowerMOSFET20Amps,60Volts,N−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotal

NTD20N06

PowerMOSFET20Amps,60Volts,N?묬hannelDPAK

MOSFET–Power,N-Channel,DPAK20A,60V Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotalGateCharge •LowerandTighterVSD

NTD20N06

PowerMOSFET20Amps,60Volts,N?묬hannelDPAK