MSD1819A-RT1G分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

MSD1819A-RT1G属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由安森美半导体制造生产的MSD1819A-RT1G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。

General Purpose Amplifier Transistor NPN Silicon Surface Mount

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

特性 Features

• High hFE, 210−460

• Low VCE(sat), < 0.5 V

• Moisture Sensitivity Level 1

• ESD Protection:

♦ Human Body Model > 4000 V

♦ Machine Model > 400 V

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant