MSCSM170DUM11T3AG数据手册Microchip中文资料规格书

描述 Description

•SiC Power MOSFET

-Low RDS(on)

-High temperature performance

•Kelvin source for easy drive

•Low stray inductance

•High efficiency converter

•Outstanding performance at high frequency operation

•Stable temperature behavior

•Direct mounting to heatsink (isolated package)

•Low junction to case thermal resistance

•RoHS Compliant

特性 Features

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• Configuration: Dual Common Source
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• VDSS (V): 1700
•
• RDSon (mR) typ: 8.8
•
• Current (A) Tc=80C: 191
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• Silicon Type: SiC MOSFET
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• Package Type: SP3F