MSC360SMA120中文资料1200V, 360 mOhm, Discrete mSiC™ MOSFET数据手册Microchip规格书

描述 Description

MSC360SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

特性 Features

Low capacitances and low gate charge
Fast switching speed due to low internal gage resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 175°C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS Compliant

简介

MSC360SMA120属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的MSC360SMA120晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。